Silicon Carbide Raman Spectrum

Silicon carbide (SiC) is a material with more than 130 variants of polytypes. All of them exhibit refractory nature and high thermal conductivity, yet each one has a unique lattice and electronic structure. There are several kinds of polytypes that attract much interest in the field of semiconductor devices. For example, because of its high electron mobility, 3C-SiC material is considered promising for the electronic devices rated for high temperature, whereas 6H-SiC is studied in view of the prospective development of blue light-emitting diodes due to its large bandgap of 2.9 eV. Since in device-related applications crystal quality plays a crucial role, the characterization of the SiC epilayers and identification of the heteroepitaxy become absolutely essential.

Raman spectroscopy of SiC

Hence, SiC Raman spectra can be used to identify various polytypes, determine the amount of their composite mixture, and distinguish the heteroepitaxy of thin layers.