The modern electronics industry often requires exceptionally reliable, high-performance, increasingly miniaturized devices. For this reason, it is essential that certain dielectrics, such as silicon oxide (SiO2), should be of the highest quality. Generally, SiO2 and other low-k dielectric materials play a vital role in the semiconductor industry. Moreover, in the microelectronics industry, SiO2 is one of the most indispensable materials used widely in the fabrication of integrated circuits.
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Raman spectroscopy is a powerful, nondestructive tool commonly applied to characterize SiO2 films. Since Raman scattering in thin films is significantly affected by optical interference, the position of a particular peak is strongly correlated with the layer thickness of SiO2. This peak is quite broad, and with decreasing layer thickness, it shifts to the low-energy side of SiO2 Raman spectra.